Silicon-based expanded-junction thin film solar cell

硅基扩展结薄膜太阳能电池

Abstract

一种硅基扩展结薄膜太阳能电池,包括顶层电极层和底层电极层,在顶层电极层和底层电极层之间设有PP-I-NN结复合层。其中的PP-I-NN结复合层由P型重度掺杂薄膜层、P型轻度掺杂薄膜层、I本征层、N型轻度掺杂薄膜层和N型重度掺杂薄膜层顺序层叠构成。本发明是基于硅等普通绿色材料的、高光电转换效率的太阳能薄膜叠层电池,应用前景无限。
A silicon-based expanded-junction thin film solar cell comprises a top-layer electrode layer and a bottom-layer electrode layer. A PP-I-NN junction composite layer is arranged between the top-layer electrode layer and the bottom-layer electrode layer. The PP-I-NN junction composite layer is formed by a P-type heavily- doped thin film layer, a P-type lightly-doped thin film layer, an I intrinsic layer, an N-type lightly-doped thin film layer and an N-type heavily- doped thin film layer stacked in sequence. The silicon-based expanded-junction thin film solar cell is based on ordinary green material such as silicon and has high photoelectric conversion efficiency, and the application prospects are infinite.

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